SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

Each imaging pixel provided in a solid-state imaging device includes a charge accumulation part which is a diffusion region formed in a substrate, a gate electrode formed lateral to the charge accumulation part on the substrate, an insulating film formed on the charge accumulation part, and a contact plug connected to the charge accumulation part so as to penetrate the insulating film and made of semiconductor. The contact plug is, at a lower part thereof, embedded in the insulating film, and is, at an upper part thereof, exposed through the insulating film. Silicide is formed on the upper part of the contact plug, and the charge accumulation part and the gate electrode are covered by the insulating film.

主权项

1. A solid-state imaging device comprising:
an imaging pixel region where a plurality of imaging pixels are arranged on a substrate, wherein each imaging pixel includes
a diffusion region formed in the substrate,a first gate electrode formed lateral to the diffusion region on the substrate,a first insulating film formed on the diffusion region, anda first contact plug connected to the diffusion region so as to penetrate the first insulating film and made of semiconductor, the first contact plug is, at a lower part thereof, embedded in the first insulating film, and is, at an upper part thereof, exposed through the first insulating film, silicide is formed on the upper part of the first contact plug, and the diffusion region and the first gate electrode are covered by the first insulating film.