SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an SiC semiconductor device which can inhibit increase in on-resistance while maintaining electrical characteristics, and a manufacturing method of the same.SOLUTION: An SiC semiconductor device 1 comprises: an SiC layer 11 including a drift region 12 which composes a surface 11B and a body region 13 which composes a part of a surface 11A and contacts the drift region 12; a drain electrode 50 electrically connected to a region on the surface 11B side in the drift region 12; and a source electrode 40 electrically connected with the body region 13. A main carrier which passes the drift region 12 and transits between the drain electrode 50 and the source electrode 40 is only an electron. A Zcenter is introduced into the drift region 12 at a concentration of not less than 1×10cmand not more than 1×10cm.