| 摘要 |
<p>PROBLEM TO BE SOLVED: To manufacture a semipolar or nonpolar substrate in which inclusions are inhibited, using a flux method.SOLUTION: A manufacturing method of a crystal of a group 13 nitride includes a first step S1, a second step S2, and a third step S3. In the first step S1, a seed crystal is prepared, which is made of a strip-shaped single crystal that has a principal crystal plane on which a group 13 nitride grows in c-axis orientation, the single crystal being nearly parallel to an a-axis of the growing group 13 nitride in the longitudinal direction. In the second step S2, the seed crystal is put in a mixed melt containing an alkali metal and a metal of the group 13, and nitrogen is dissolved in the mixed melt. Crystal growth is thus initiated in the c-axis direction relative to the principal plane which is a main origin of the crystal growth of the seed crystal. In the third step S3, Conditions of crystal growth having an effect on the crystal growth are adjusted to continue the crystal growth so that a principal growth plane which is not parallel to the principal plane of the crystal of the group 13 nitride is parallel to a {10-11} plane.</p> |
