SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device includes a substrate and memory cell transistors having a gate electrode above the substrate, and an oxide film. The gate electrode includes a charge storage layer above the substrate, a first insulating film on the charge storage layer, and a control gate electrode on the first insulating film, the control gate electrode including a metal film. The oxide film is disposed on the metal film.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; and memory cell transistors having a gate electrode above the semiconductor substrate, wherein the gate electrode comprises:
a charge storage layer formed above the semiconductor substrate;a first insulating film formed on the charge storage layer; anda control gate electrode formed on the first insulating film, the control gate electrode including a metal film containing nitrogen, and an oxide film formed on a top surface of the metal film.