| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes a semiconductor substrate, a plurality of photoelectric conversion elements arranged on the semiconductor substrate to collectively form an image sensor, a plurality of trenches each formed between the photoelectric conversion elements adjacent to each other, and a plurality of impurity diffusion layers each provided at a bottom of the trench at a position deeper than a p-n junction of the photoelectric conversion element. |
| 申请公布号 |
US2015076572(A1) |
申请公布日期 |
2015.03.19 |
| 申请号 |
US201414482092 |
申请日期 |
2014.09.10 |
| 申请人 |
Sakurano Katsuyuki;Watanabe Hirobumi;Negoro Takaaki;Aisu Katsuhiko;Yoneda Kazuhiro |
发明人 |
Sakurano Katsuyuki;Watanabe Hirobumi;Negoro Takaaki;Aisu Katsuhiko;Yoneda Kazuhiro |
| 分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate; a plurality of photoelectric conversion elements arranged on the semiconductor substrate, to collectively form an image sensor; a plurality of trenches each formed between the photoelectric conversion elements adjacent to each other; and a plurality of impurity diffusion layers each provided at a bottom of the trench at a position deeper than a p-n junction of the photoelectric conversion clement. |
| 地址 |
Hyogo JP |
