| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device is provided. The semiconductor device includes an active fin region, at least a gate strip, and a dummy fin region. The active fin region comprises at least an active fin. The gate strip is formed on the active fin region and extending across the active fin. The dummy fin region, comprising a plurality of dummy fins, is formed on two sides of the active fin region, and the dummy fins are formed on two sides of the gate strip. |
| 申请公布号 |
US2015076569(A1) |
申请公布日期 |
2015.03.19 |
| 申请号 |
US201314027334 |
申请日期 |
2013.09.16 |
| 申请人 |
UNITED MICROELECTRONCS CORP. |
发明人 |
Hong Shih-Fang;Chiu Chung-Yi |
| 分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
an active fin region, comprising at least an active fin; at least a gate strip formed on the active fin region and extending across the active fin; and a dummy fin region, comprising a plurality of dummy fins, formed on two sides of the active fin region, and the dummy fins are formed on two sides of the gate strip. |
| 地址 |
Hsinchu TW |
