SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

To provide a transistor having highly stable electric characteristics and also a miniaturized structure. Further, also high performance and high reliability of a semiconductor device including the transistor can be achieved. The transistor is a vertical transistor in which a first electrode having an opening, an oxide semiconductor layer, and a second electrode are stacked in this order, a gate insulating layer is provided in contact with side surfaces of the first electrode, the oxide semiconductor layer, and the second electrode, and a ring-shaped gate electrode facing the side surfaces of the first electrode, the oxide semiconductor layer, and the second electrode with the gate insulating layer interposed therebetween is provided. In the opening in the first electrode, an insulating layer in contact with the oxide semiconductor layer is embedded.

主权项

1. A semiconductor device comprising:
a first electrode; an oxide semiconductor layer over the first electrode; a second electrode overlapping with the first electrode with the oxide semiconductor layer interposed therebetween; a gate insulating layer in contact with the first electrode, the oxide semiconductor layer, and the second electrode; and a gate electrode facing a side surface of the oxide semiconductor layer with the gate insulating layer interposed therebetween, wherein at least one of the first electrode and the second electrode has an opening through which the oxide semiconductor layer is exposed, and wherein an insulating layer which is in contact with the oxide semiconductor layer is embedded in the opening.