发明名称 INTEGRATED CONDUCTIVE SUBSTRATE, AND ELECTRONIC DEVICE EMPLOYING SAME
摘要 Provided are an integrated conductive substrate simultaneously serving as a substrate and an electrode, and an electronic device using the same. The integrated conductive substrate includes a conductive layer containing iron, which has a first surface having a first root mean square roughness, and a semiconductor layer containing a semiconductor material, which has a second surface having a second root mean square roughness and is formed on the first surface. Here, the semiconductor layer includes a semiconductor-type planarization layer formed by a solution process using at least one of the semiconductor material and a precursor of the semiconductor material to planarize the first surface of the conductive layer, and the second root mean square roughness is smaller than the first root mean square roughness.
申请公布号 US2015075606(A1) 申请公布日期 2015.03.19
申请号 US201314394069 申请日期 2013.04.10
申请人 POSTECH ACADEMY - INDUSTRY FOUNDATION 发明人 Lee TaeWoo;Kim YoungHoon
分类号 H01L51/00;H01L51/44;H01L51/42 主分类号 H01L51/00
代理机构 代理人
主权项 1. An integrated conductive substrate simultaneously serving as a substrate and an electrode, comprising: a conductive layer containing iron, which has a first surface having a first root mean square roughness (Rq); and a semiconductor layer containing a semiconductor material, which has a second surface having a second root mean square roughness and is formed on the first surface, wherein the semiconductor layer includes a semiconductor-type planarization layer formed by a solution process using at least one of the semiconductor material and a precursor of the semiconductor material to planarize the first surface of the conductive layer, and the second root mean square roughness is smaller than the first root mean square roughness.
地址 Pohang-si, Gyeongsangbuk-do KR