发明名称 |
INTEGRATED CONDUCTIVE SUBSTRATE, AND ELECTRONIC DEVICE EMPLOYING SAME |
摘要 |
Provided are an integrated conductive substrate simultaneously serving as a substrate and an electrode, and an electronic device using the same. The integrated conductive substrate includes a conductive layer containing iron, which has a first surface having a first root mean square roughness, and a semiconductor layer containing a semiconductor material, which has a second surface having a second root mean square roughness and is formed on the first surface. Here, the semiconductor layer includes a semiconductor-type planarization layer formed by a solution process using at least one of the semiconductor material and a precursor of the semiconductor material to planarize the first surface of the conductive layer, and the second root mean square roughness is smaller than the first root mean square roughness. |
申请公布号 |
US2015075606(A1) |
申请公布日期 |
2015.03.19 |
申请号 |
US201314394069 |
申请日期 |
2013.04.10 |
申请人 |
POSTECH ACADEMY - INDUSTRY FOUNDATION |
发明人 |
Lee TaeWoo;Kim YoungHoon |
分类号 |
H01L51/00;H01L51/44;H01L51/42 |
主分类号 |
H01L51/00 |
代理机构 |
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代理人 |
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主权项 |
1. An integrated conductive substrate simultaneously serving as a substrate and an electrode, comprising:
a conductive layer containing iron, which has a first surface having a first root mean square roughness (Rq); and a semiconductor layer containing a semiconductor material, which has a second surface having a second root mean square roughness and is formed on the first surface, wherein the semiconductor layer includes a semiconductor-type planarization layer formed by a solution process using at least one of the semiconductor material and a precursor of the semiconductor material to planarize the first surface of the conductive layer, and the second root mean square roughness is smaller than the first root mean square roughness. |
地址 |
Pohang-si, Gyeongsangbuk-do KR |