TWO STEP METHOD OF RAPID CURING A SEMICONDUCTOR POLYMER LAYER

摘要

A semiconductor device and method of making the semiconductor device is described. A semiconductor die is provided. A polymer layer is formed over the semiconductor die. A via is formed in the polymer layer. The polymer layer is crosslinked in a first process. The polymer layer is thermally cured in a second process. The polymer layer can comprise polybenzoxazoles (PBO), polyimide, benzocyclobutene (BCB), or siloxane-based polymers. A surface of the polymer layer can be crosslinked by a UV bake to control a slope of the via during subsequent curing. The second process can further comprise thermally curing the polymer layer using conduction, convection, infrared, or microwave heating. The polymer layer can be thermally cured by increasing a temperature of the polymer at a rate greater than or equal to 10 degrees Celsius per minute, and can be completely cured in less than or equal to 60 minutes.

主权项

1. A method of making a semiconductor device, comprising:
providing a semiconductor die; forming a polymer layer over the semiconductor die; forming a via in the polymer layer; crosslinking a surface of the polymer layer in a first process, after forming the via, by exposing the polymer layer to ultraviolet (UV) radiation at an elevated temperature in a range of 100-200 degrees Celsius for a time less than or equal to 3 minutes; and thermally curing the polymer layer by heating the polymer layer at temperatures greater than or equal to 200 degrees Celsius for a time of less than 15 minutes in a second process that occurs after the first process.