| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
According to one exemplary embodiment, a method of manufacturing a semiconductor device is provided, the method including: dry-etching an aluminum film containing silicon with a first etching gas containing halogen to decrease the thickness of the aluminum film; and dry-etching the aluminum film with a second etching gas containing inert gas. |
| 申请公布号 |
US2015079800(A1) |
申请公布日期 |
2015.03.19 |
| 申请号 |
US201414202795 |
申请日期 |
2014.03.10 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Iguchi Tomoyuki |
| 分类号 |
H01L21/3213 |
主分类号 |
H01L21/3213 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device comprising:
firstly dry-etching an aluminum film containing silicon with a first etching gas containing halogen to decrease the thickness of the aluminum film; and secondly dry-etching the aluminum film with a second etching gas containing inert gas. |
| 地址 |
Tokyo JP |
