发明名称 METHOD AND STRUCTURE FOR CREATING CAVITIES WITH EXTREME ASPECT RATIOS
摘要 Embodiments relate to structures, systems and methods for more efficiently and effectively etching sacrificial and other layers in substrates and other structures. In embodiments, a substrate in which a sacrificial layer is to be removed to, e.g., form a cavity comprises an etch dispersion system comprising a trench, channel or other structure in which etch gas or another suitable gas, fluid or substance can flow to penetrate the substrate and remove the sacrificial layer. The trench, channel or other structure can be implemented along with openings or other apertures formed in the substrate, such as proximate one or more edges of the substrate, to even more quickly disperse etch gas or some other substance within the substrate.
申请公布号 US2015079787(A1) 申请公布日期 2015.03.19
申请号 US201314031694 申请日期 2013.09.19
申请人 Infineon Technologies Dresden GmbH 发明人 Kautzsch Thoralf;Fröhlich Heiko;Vogt Mirko;Stegemann Maik
分类号 H01L21/306;H01L29/06 主分类号 H01L21/306
代理机构 代理人
主权项 1. An etch dispersion system formed in a substrate and comprising: at least one dispersion aperture formed in the substrate and configured to provide access to a sacrificial layer of the substrate by an etch material; and at least one dispersion channel formed in the substrate proximate the sacrificial layer and configured to facilitate dispersion of the etch material within the substrate.
地址 Dresden DE