SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

The invention provides a semiconductor device including a substrate, a dielectric layer, a dummy bonding pad, a bonding pad, a redistribution layer, and a metal interconnect. The substrate includes a non-device region and a device region. The dielectric layer is on the non-device region and the device region. The dummy bonding pad is on the dielectric layer of the non-device region. The metal interconnect is in the dielectric layer of the non-device region and connected to the dummy bonding pad. The bonding pad is on the dielectric layer of the device region. The buffer layer is between the bonding pad and the dielectric layer. The buffer layer includes metal, metal nitride, or a combination thereof The redistribution layer is on the dielectric layer and connects the dummy bonding pad and the bonding pad.

主权项

1. A semiconductor device, comprising:
a substrate comprising a non-device region and a device region; a dielectric layer on the non-device region and the device region; a dummy bonding pad on the dielectric layer of the non-device region; a first metal interconnect in the dielectric layer of the non-device region and connected to the dummy bonding pad; a bonding pad on the dielectric layer of the device region; a buffer layer between the bonding pad and the dielectric layer, wherein the buffer layer comprises a metal, metal nitride, or a combination thereof; and a redistribution layer on the dielectric layer, wherein the redistribution layer connects the dummy bonding pad and the bonding pad.