SEMICONDUCTOR DEVICE ASSEMBLIES INCLUDING FACE-TO-FACE SEMICONDUCTOR DICE AND RELATED METHODS

摘要

Methods of manufacturing semiconductor device assemblies include attaching a back side of a first semiconductor die to a substrate and structurally and electrically coupling a first end of laterally extending conductive elements to conductive terminals on or in a surface of the substrate. Second ends of the laterally extending conductive elements are structurally and electrically coupled to bond pads on or in an active surface of the first semiconductor die. Conductive structures are structurally and electrically coupled to bond pads of a second semiconductor die. At least some of the conductive structures are aligned with at least some of the bond pads of the first semiconductor die. An active surface of the second semiconductor die faces an active surface of the first semiconductor die. At least some of the conductive structures are structurally and electrically coupled to at least some of the bond pads of the first semiconductor die.

主权项

1. A semiconductor device assembly, comprising:
a plurality of vertically stacked discrete dielectric structures disposed between an active surface of a first semiconductor die and an active surface of a second semiconductor die, the active surface of the first semiconductor die facing the active surface of the second semiconductor die; and a plurality of laterally extending conductive elements, a first end of each laterally extending conductive element being structurally and electrically coupled to a conductive terminal of a substrate; a second end of each laterally extending conductive element being structurally and electrically coupled to at least one of a bond pad of the first semiconductor die, a bond pad of the second semiconductor die, and a conductive structure electrically and structurally coupled to a bond pad of the first semiconductor die and a bond pad of the second semiconductor die; wherein an intermediate portion of each laterally extending conductive element is disposed between and in contact with at least two of the plurality of vertically stacked discrete dielectric structures.