SEMICONDUCTOR DEVICE

摘要

A semiconductor device of an embodiment has a first conductive type first semiconductor layer, a second conductive type second semiconductor layer provided in the first semiconductor layer having a first lateral surface and a first bottom portion contacting the first semiconductor layer. The second semiconductor layer has a first void portion inside. A second conductive type impurity concentration decreases from the first lateral surface toward the first void portion. And the device has a second conductive type third semiconductor layer provided in the first semiconductor layer such that the first semiconductor layer is sandwiched between the third semiconductor layer and the second semiconductor layer. The third semiconductor layer has a second lateral surface and a second bottom portion contacting the first semiconductor layer. The third semiconductor layer has a second void portion inside. A second conductive type impurity concentration decreases from the second lateral surface toward the second void portion.

主权项

1. A semiconductor device comprising:
a first conductive type first semiconductor layer; a second conductive type second semiconductor layer provided in the first semiconductor layer, the second semiconductor layer including a first lateral surface contacting the first semiconductor layer and a first bottom portion contacting the first semiconductor layer, the second semiconductor layer including a first void portion inside, the second semiconductor layer having a second conductive type impurity concentration decreasing from the first lateral surface and the first bottom portion toward the first void portion; and a second conductive type third semiconductor layer provided in the first semiconductor layer such that the first semiconductor layer is positioned between the third semiconductor layer and the second semiconductor layer, the third semiconductor layer including a second lateral surface contacting the first semiconductor layer and a second bottom portion contacting the first semiconductor layer, the third semiconductor layer including a second void portion inside, the third semiconductor layer having a second conductive type impurity concentration decreasing from the second lateral surface and the second bottom portion toward the second void portion.