| 发明名称 |
SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A solid-state imaging device includes: a semiconductor substrate; a pixel unit formed on the semiconductor substrate; and a peripheral circuit unit formed on the semiconductor substrate, at a periphery of the pixel unit, in which the pixel unit includes: a photoelectric conversion film which converts incident light into charges; and a floating diffusion which holds the charges, the peripheral circuit unit includes a transistor including a gate electrode and two source and drain diffusion regions, and the two source and drain diffusion regions have a higher impurity concentration than an impurity concentration of the floating diffusion. |
| 申请公布号 |
US2015076484(A1) |
申请公布日期 |
2015.03.19 |
| 申请号 |
US201414554027 |
申请日期 |
2014.11.25 |
| 申请人 |
Panasonic Intellectual Property Management Co., Ltd. |
发明人 |
MORIYAMA Yoshiya;FUJIMOTO Hiromasa;SAEKI Kosaku;TAKAHASHI Nobuyoshi |
| 分类号 |
H01L27/30;H01L21/324;H01L29/423;H01L21/265;H01L27/146;H01L29/08 |
主分类号 |
H01L27/30 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A solid-state imaging device comprising:
a semiconductor substrate; a pixel unit formed on the semiconductor substrate; and a peripheral circuit unit formed on the semiconductor substrate, at a periphery of the pixel unit, wherein the pixel unit includes: a photoelectric conversion film which converts incident light into charges; and a floating diffusion which holds the charges, the peripheral circuit unit includes a transistor including a gate electrode and two source and drain diffusion regions, and the two source and drain diffusion regions have a higher impurity concentration than an impurity concentration of the floating diffusion. |
| 地址 |
Osaka JP |
