MEMORY DEVICE

摘要

According to one embodiment, a memory device includes a first electrode, a second electrode and a variable resistance layer. The second electrode includes a metal. The metal is more easily ionizable than a material of the first electrode. The variable resistance layer is disposed between the first electrode and the second electrode. The variable resistance layer includes a first layer and a second layer. The first layer has a relatively high crystallization rate. The second layer contacts the first layer. The second layer has a relatively low crystallization rate. The first layer and the second layer are stacked along a direction connecting the first electrode and the second electrode.

主权项

1. A memory device, comprising:
a first electrode; a second electrode including a metal, the metal being more easily ionizable than a material of the first electrode; and a variable resistance layer disposed between the first electrode and the second electrode, the variable resistance layer including:
a first layer having a relatively high crystallization rate; anda second layer contacting the first layer, the second layer having a relatively low crystallization rate, the first layer and the second layer being stacked along a direction connecting the first electrode and the second electrode.