| 摘要 |
Provided is a method for manufacturing a semiconductor device. The method may include: forming a first material layer (1004) and a second material layer (1006) on a substrate (1000); forming an auxiliary layer (1010) on the second material layer (1006); forming an opening in the auxiliary layer (1010) corresponding to the gate structures to be formed; forming a third material layer (1012) to cover the auxiliary layer (1010); forming a mask layer (1014) on the third material layer (1012) corresponding to at least one of the gate structures; in the presence of the mask layer (1014), patterning the third material layer (1012) to remove the laterally extending portion thereof; removing the auxiliary layer (1010); using the patterned third material layer (1012) as a mask, patterning the second material layer (1006) to form the gate structures defining different gate length. |
