| 摘要 |
Provided is a method for manufacturing a semiconductor device, capable of resolving problems related to chip thickness, such as a thickness limit by a manufacturing process, and a performance limit a final product. According to various embodiments of the present invention, the method for manufacturing a semiconductor device comprises the following steps of: providing a semiconductor workpiece, wherein a first side of the semiconductor includes a device area, and the mechanical stability of the semiconductor workpiece is insufficient to resist at least one back end process without damage; and depositing at least one conductive layer on a second side of the semiconductor workpiece opposite the first side of the semiconductor workpiece, wherein the conductive layer enhances the mechanical stability of the semiconductor workpiece to be sufficient to resist the back end process without damage. |
