发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, PATTERN CORRECTION METHOD, AND PHOTOMASK |
摘要 |
PROBLEM TO BE SOLVED: To uniformly correct a line width of patterns formed on a wafer even when distribution of a change in line width in a wafer surface varies depending on the pattern or a pitch.SOLUTION: A method for manufacturing a semiconductor device includes: using a photomask having a plurality of exposure regions in which the same exposure layouts are subjected to different correction processing, respectively; selecting one exposure region out of the plurality of exposure regions of the photomask according to an exposure shot position of a resist film formed on a semiconductor wafer, and exposing the exposure region with light; and processing the semiconductor wafer based on patterns transferred to the resist film with the light exposure to form a circuit pattern on the semiconductor wafer. |
申请公布号 |
JP2015052738(A) |
申请公布日期 |
2015.03.19 |
申请号 |
JP20130186331 |
申请日期 |
2013.09.09 |
申请人 |
FUJITSU SEMICONDUCTOR LTD |
发明人 |
MINAMI TAKANOBU |
分类号 |
G03F1/36;H01L21/027 |
主分类号 |
G03F1/36 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|