发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, PATTERN CORRECTION METHOD, AND PHOTOMASK
摘要 PROBLEM TO BE SOLVED: To uniformly correct a line width of patterns formed on a wafer even when distribution of a change in line width in a wafer surface varies depending on the pattern or a pitch.SOLUTION: A method for manufacturing a semiconductor device includes: using a photomask having a plurality of exposure regions in which the same exposure layouts are subjected to different correction processing, respectively; selecting one exposure region out of the plurality of exposure regions of the photomask according to an exposure shot position of a resist film formed on a semiconductor wafer, and exposing the exposure region with light; and processing the semiconductor wafer based on patterns transferred to the resist film with the light exposure to form a circuit pattern on the semiconductor wafer.
申请公布号 JP2015052738(A) 申请公布日期 2015.03.19
申请号 JP20130186331 申请日期 2013.09.09
申请人 FUJITSU SEMICONDUCTOR LTD 发明人 MINAMI TAKANOBU
分类号 G03F1/36;H01L21/027 主分类号 G03F1/36
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