| 发明名称 |
METHOD FOR PRODUCING SiC SINGLE CRYSTAL |
| 摘要 |
A method for producing a SiC single crystal having a large growth thickness of 10 mm or greater by a solution process is provided. This is achieved by a method for producing a SiC single crystal, wherein a SiC seed crystal substrate is contacted with a Si—C solution with a temperature gradient, in which the temperature decreases from the interior toward the surface, to grow a SiC single crystal, and wherein the temperature gradient in the surface region of the Si—C solution is increased at least once while the SiC single crystal is grown with the (000-1) face as the growth surface, to grow a SiC single crystal having a growth thickness of 10 mm or greater. |
| 申请公布号 |
US2015075419(A1) |
申请公布日期 |
2015.03.19 |
| 申请号 |
US201414483651 |
申请日期 |
2014.09.11 |
| 申请人 |
Toyota Jidosha Kabushiki Kaisha ;Nippon Steel & Sumitomo Metal Corporation |
发明人 |
Kado Motohisa;Daikoku Hironori;Kusunoki Kazuhiko;Kamei Kazuhito |
| 分类号 |
C30B19/10;C30B29/36;C30B19/06;C30B19/04;C30B19/12 |
主分类号 |
C30B19/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for producing a SiC single crystal, wherein a SiC seed crystal substrate is contacted with a Si—C solution with a temperature gradient, in which the temperature decreases from the interior toward the surface, to grow a SiC single crystal, and
wherein the temperature gradient in the surface region of the Si—C solution is increased at least once while the SiC single crystal is grown with the (000-1) face as the growth surface, to grow a SiC single crystal having a growth thickness of 10 mm or greater. |
| 地址 |
Toyota-shi Aichi-ken JP |
