ULTRA-THIN METAL WIRES FORMED THROUGH SELECTIVE DEPOSITION
摘要
The embodiments of the present invention relate generally to the fabrication of integrated circuits, and more particularly to a structure and method for fabricating a pair of ultra-thin metal wires in an opening using a selective deposition process.
申请公布号
WO2015035925(A1)
申请公布日期
2015.03.19
申请号
WO2014CN86293
申请日期
2014.09.11
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM (CHINA) CO., LIMITED