Capacitive Acceleration Sensor with a Bending Elastic Beam and Preparation Method Thereof

摘要

The present invention provides a capacitive acceleration sensor with a bending elastic beam and a preparation method. The sensor at least includes a first electrode structural layer, a middle structural layer and a second electrode structural layer; wherein the first electrode structural layer and the second electrode structural layer are provided with an electrode lead via-hole, respectively; the middle structural layer includes: a frame formed on a SOI silicon substrate with a double device layers, a seismic mass whose double sides are symmetrical and a bending elastic beam with one end connected to the frame and the other end connected to the seismic mass, wherein anti-overloading bumps and damping grooves are symmetrically provided on two sides of the seismic mass, and the bending elastic beams at different planes are staggered distributed and are not overlapped with each other in space. Since the bending times, the total length and the total width of the bending elastic beam can be prepared as needed, capacitive acceleration sensors with different sensitivities can be manufactured according to the present invention, and the manufacturing has high flexibility.

主权项

1. A method for preparing a capacitive acceleration sensor with a bending elastic beam, at least including:
1) performing etching at two surfaces of a SOI silicon substrate with a double device layer based on an anisotropic etching method, causing the two surfaces to be concave respectively; 2) forming a plurality of anti-overloading bumps at recesses on the two surfaces based on photolithography and the anisotropic etching method, respectively; 3) further forming damping grooves at the two surfaces of the structure on which the anti-overloading bumps have been formed based on photolithography and the anisotropic etching method, respectively; 4) performing etching on the two surfaces of the structure on which the damping grooves have been formed, respectively, based on photolithography and dry etching, and etching self-stops at a buried oxide layer, whereby on the two surfaces is formed a structure where the frame and the seismic mass are connected to the bending elastic beam, respectively, and the anti-overloading bumps and the damping grooves are caused to be positioned on the corresponding seismic mass, and the bending elastic beams of the two surfaces are staggered distributed and are not overlapped with each other in space; 5) releasing the bending elastic beam and the seismic mass based on photolithography, dry etching and the anisotropic etching method; 6) simultaneously bonding the first electrode structural layer, the structure comprising the released bending elastic beam and the seismic mass, and the second electrode structural layer based on a bonding process; 7) forming electrode lead via-holes at the first electrode structural layer and the second electrode structural layer of the bonded structure based on infrared aligning; and 8) preparing an electrode on the structure on which the via-holes have been formed.