SAPPHIRE THINNING AND SMOOTHING USING HIGH TEMPERATURE WET PROCESS

摘要

A method for thinning a sapphire substrate is provided that includes placing a sapphire substrate in a pre-heat tank to raise the temperature of said sapphire substrate; placing the pre-heated sapphire substrate in a wet etch tank comprising a solution including at least one of H2SO4 and H3PO4 at a temperature ranging between 200-400 °C; monitoring the time to determine when to remove said sapphire substrate from said wet etch tank to thin said sapphire substrate; and placing the sapphire substrate in a cool-down tank to lower the temperature of the sapphire substrate. The method provides for a high throughput and is cost effective process, thereby allowing for the adoption of sapphire in high volume and lower cost applications.