THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE INCLUDING THE SAME

摘要

A thin film transistor includes a gate electrode which is arranged on a substrate and a gate insulation layer which is arranged on the substrate and covers the gate electrode. An oxide semiconductor pattern includes a channel part which is arranged on the gate insulation layer and overlaps the gate electrode and a low resistance pattern which is formed on the side of the channel part and includes oxygen vacancy. A channel protection layer is arranged on the oxide semiconductor pattern and overlaps the gate electrode. A reactive layer includes metal oxide and covers the oxide semiconductor pattern and the channel protection layer. A source electrode and a drain electrode are in contact with the oxide semiconductor pattern. Parasitic capacitance between the electrodes is blocked by the low resistance pattern.