METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

A silicon carbide substrate (90) having a surface (SO) is prepared. A coating film (50) made of a first material is formed directly on the surface (SO) of the silicon carbide substrate (90). A mask layer (31) made of a second material is formed on the coating film (50). The first material is higher in adhesiveness with silicon carbide than the second material. A first opening (P1) is formed in the mask layer (31). First impurity ions for providing a first conductivity type are implanted into the silicon carbide substrate (90) by using ion beams (J1) passing through the first opening (P1) in the mask layer (31) and through the coating film (50).