| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film transistor which can reduce the number of steps of a manufacturing process and reduce cost because of a simple structure of the element. <P>SOLUTION: A thin film transistor 100 comprises a substrate 110 having a principal surface, a light-shielding layer 111 arranged in a lamination direction with respect to the principal surface of the substrate 110, an organic semiconductor layer 150 provided so as to be included in the light-shielding layer 111 when viewed from the lamination direction, a source electrode 120 and a drain electrode 130 provided so as to contact the organic semiconductor layer 150 and face each other to form a channel region, a gate insulation layer 160 in which a trench 165 is provided so as not to overlap the source electrode 120 and the drain electrode 130 on a circumference of the organic semiconductor layer 150 when viewed from the lamination direction, and a gate electrode 140 provided on the gate insulation layer 160 and at the trench 165 so as to include the organic semiconductor layer 150 when viewed from the lamination direction. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
