| 摘要 |
<p>Consistent with an example embodiment, there is an integrated circuit device (IC) built on a substrate of a thickness. The IC comprises an active device region of a shape, the active device region having topside and an underside. Through silicon vias (TSVs) surround the active device region, the TSVs having a depth defined by the substrate thickness. On the underside of and having the shape of the active device region, is an insulating layer. A thin-fil conductive shield is on the insulating layer, the conductive shield is in electrical contact with the TSVs.
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