A METHOD OF FABRICATING STRAIN-RELAXED SI-GE BUFFER LAYER AND SI-GE BUFFER LAYER FABRICATED THEREBY

摘要

The present invention relates to a method of fabricating a strain-relaxed Si-Ge buffer layer and a Si-Ge buffer layer fabricated thereby. The present invention manufactures a strain-relaxed Si-Ge buffer layer by a simple process as compared with an existing fabricating method by directly injecting a Ge in plasma ion in a silicon wafer and using a post heat treat process.