发明名称 荷電粒子ビーム描画装置および荷電粒子ビーム描画方法
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a charged particle beam lithography apparatus and method that can increase a lithography processing speed of a mask substrate. <P>SOLUTION: A mask substrate 11 is fed from a load lock chamber 14 through a gate valve 21 to a constant temperature chamber 16 by a feeding robot 24 disposed in a vacuum unit 15 intercommunicating with the load lock chamber 14 to keep the mask substrate 11 to a constant temperature and perform alignment of positional displacement and rotational displacement. The load lock chamber 14 can be switched between an atmosphere state and a vacuum state. The mask substrate 11 is then fed to a substrate cover attaching/detaching chamber to mount a mask cover 17 thereon and also to be destaticized. The mask substrate 11 on which the mask cover 17 is mounted is fed to a lithography chamber 19. Before the mask substrate 11 is subjected to lithography using a charged particle beam in the lithography chamber 19, a next mask substrate 12 is fed into the constant temperature chamber 16, and kept to a constant temperature during the lithography of the mask substrate 11, thereby the efficiency of the mask substrate lithography processing for the second and subsequent mask substrates can be enhanced. <P>COPYRIGHT: (C)2012,JPO&INPIT</p>
申请公布号 JP5687009(B2) 申请公布日期 2015.03.18
申请号 JP20100188324 申请日期 2010.08.25
申请人 发明人
分类号 H01L21/027;G03F1/78 主分类号 H01L21/027
代理机构 代理人
主权项
地址