| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an organic semiconductor element having excellent stability of electrical characteristics, and to provide an organic semiconductor element. <P>SOLUTION: A method of manufacturing an organic semiconductor element comprises the steps of: forming a gate electrode; forming a gate insulating film; forming source/drain electrodes; forming an organic semiconductor film; and forming a protective film on the organic semiconductor film. In the step of forming the protective film on the organic semiconductor film, the protective film is formed using a protective film forming solution containing (a) at least one organic solvent selected from propylene carbonate, acetonitrile, and dimethylsulfoxide and (b) an organic compound soluble in the organic solvent (a) by wet process. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
