发明名称 Verfahren zur Kontaktierung von elektrischen Bauelementen, insbesondere von Dioden-, Transistorsystemen und integrierten Systemen
摘要 1,148,352. Semi-conductor devices; capacitors. SIEMENS A.G. 13 Sept., 1967 [14 Sept., 1966], No. 41756/67. Headings H1K and H1M. Each of a plurality of electrical components 8-particularly semi-conductor components, though capacitors and resistors are also mentioned-is sandwiched between a portion 6 of a suitably cut-out metal sheet and a second portion 8 which is bent over from an initial position shown in section A of Fig. 1 to a final position shown in section B of Fig. 1. The components are thus held on the sheet and may be transported on it through processing stages, such as etching. Ultimately the sheet, which may be solder-coated for the purpose, is bonded to the components by soldering; alternatively, a thermo-compression bonding technique may be employed. Then each device is individually encapsulated by a moulding process and finally the portions of the sheet to which the components have been bonded are cut from the sheet and serve as the component terminals. For components required to have more than two terminals, such as the transistor depicted in Fig. 3 (not shown), the pattern of cut-outs in the original sheet is appropriately modified.
申请公布号 AT270752(B) 申请公布日期 1969.05.12
申请号 AT19670008339 申请日期 1967.09.12
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人
分类号 H01L23/495 主分类号 H01L23/495
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