发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
According to one embodiment, a semiconductor device (110) includes a first semiconductor region (10), a second semiconductor region (20), and a third semiconductor region (30). The first semiconductor region (10) includes silicon carbide. A conductivity type of the first semiconductor region (10) is a first conductivity type. The second semiconductor region (20) includes silicon carbide. A conductivity type of the second semiconductor region (20) is a second conductivity type. The third semiconductor region (30) includes silicon carbide. A conductivity type of the third semiconductor (30) is the second conductivity type. The third semiconductor region (30) is provided between the first semiconductor region (10) and the second semiconductor region (20). As viewed in a direction connecting the first semiconductor region (10) and the second semiconductor region (20), an area of an overlapping region of the second semiconductor region (20) and the third semiconductor region (30) is smaller than an area of an overlapping region of the first semiconductor region (10) and the second semiconductor region (20). |
申请公布号 |
EP2849232(A2) |
申请公布日期 |
2015.03.18 |
申请号 |
EP20140181168 |
申请日期 |
2014.08.15 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OTA, CHIHARU;TAKAO, KAZUTO;NISHIO, JOHJI;SHINOHE, TAKASHI |
分类号 |
H01L29/861;H01L29/16 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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