发明名称 |
Wafer level encapsulation structure and fabrication method thereof |
摘要 |
<p>The present invention concerns a hermetic silicon wafer structure comprising a patterned SOI MEMS wafer, a single crystal Si cap attached to the SOI MEMS wafer, and a hermetic silicon-oxide sealing ring in between the said MEMS wafer and the single crystal Si cap. The invention also concerns a silicon wafer structure comprising a silicon-on-insulator wafer embodying MEMS devices, and a single crystal silicon cap attached to the silicon-on-insulator wafer by means of a silicon-oxide sealing ring such that the single crystal silicon cap, the silicon-oxide sealing ring and the silicon-on-insulator wafer define a hermetic cavity around the MEMS devices. Further, the invention concerns methods of fabricating a wafer and a method of manufacturing a Viable Engineered Substrate comprising a patterned SOI MEMS wafer and a single crystal Si cap.</p> |
申请公布号 |
EP2848586(A1) |
申请公布日期 |
2015.03.18 |
申请号 |
EP20130199215 |
申请日期 |
2013.12.20 |
申请人 |
TEKNOLOGIAN TUTKIMUSKESKUS VTT |
发明人 |
DEKKER, JAMES;GUO, BIN;GAO, FENG |
分类号 |
B81C1/00 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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