| 摘要 |
<p>The present invention relates to an apparatus for processing a substrate which comprises a chamber; a substrate support member; a baffle; and an exhaust unit. A processing space where a semiconductor process is conducted by receiving reaction gas is formed inside the chamber. The substrate support member is installed inside the chamber, and the substrate is mounted therein. The exhaust unit encloses the substrate support member as formed in a ring shape, and a plurality of horizontal exhaust holes exhausting remaining gas and reaction by-products generated during the semiconductor process from the processing space to a side part adjacent to the substrate support member are formed. The baffle is installed in an upper part of the exhaust unit inside the processing space, encloses the substrate support member as formed in a ring shape, and opens and closed the processing space as connected to the exhaust unit to be detachable by a vertical motion. Accordingly, the apparatus for processing a substrate can quickly discharge the remaining gas and the reaction by-products inside the chamber by using the venturi effect as the apparatus discharges the remaining gas and the reaction by-products of the processing space through the horizontal exhaust holes formed more narrowly in comparison with the processing space.</p> |
