| 摘要 |
<p>Provided are a composite substrate which includes a silicon substrate having improved crystallinity, and a method for manufacturing a composite substrate, and a method for manufacturing an electronic component. A composite substrate (1) is formed by bonding a semiconductor substrate (20) onto a support substrate (10) having electric insulating properties. The semiconductor substrate (20) is formed of silicon. The semiconductor substrate (20) includes a plurality of first regions (20x) on each of which an element portion which functions as a semiconductor device is formed, and a second region (20y) which is positioned between the plurality of first regions (20x). In the semiconductor substrate (20), an oxidized portion (22) which is composed of silicon oxide is formed on a bottom surface (20b) of the second region (20y).</p> |
