| 发明名称 |
Method for manufacturing thermoelectric materials |
| 摘要 |
Disclosed is a method of manufacturing a thermoelectric material having high thermoelectric conversion performance at a wide temperature range. The method of manufacturing a thermoelectric material according to the present invention comprises the following steps: forming a mixture by mixing copper and selenium according to the following chemical formula 1: Cu_xSe; and forming the mixture by heat treating the mixture. In chemical formula 1, 2<x<=2.6. The thermoelectric material can include an induced nano DOT (INDOT) as a copper containing particle. Here, INDOT represents a particle with a diameter, for example, between 1 nanometer and 100 nanometers which is spontaneously generated during a thermal material formation process. This nano DOT, that is INDOT, can exist on a grain boundary of a semiconductor. |
| 申请公布号 |
KR20150029573(A) |
申请公布日期 |
2015.03.18 |
| 申请号 |
KR20140117864 |
申请日期 |
2014.09.04 |
| 申请人 |
LG CHEM. LTD. |
发明人 |
KO, KYUNG MOON;KIM, TAE HOON;PARK, CHEOL HEE;LEE, JAE KI |
| 分类号 |
H01L35/14;H01L35/16;H01L35/20;H01L35/34 |
主分类号 |
H01L35/14 |
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