发明名称 PHOTOMASK BLANK AND PROCESS FOR PRODUCING THE SAME, PROCESS FOR PRODUCING PHOTOMASK, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE
摘要 It is provided a photomask blank that has good flatness when a light-shielding film is patterned and hence can provide a good mask pattern accuracy and a good pattern transfer accuracy, and a method of producing a photomask. A photomask blank of the present invention includes a light-shielding film containing at least chromium on a light-transmitting substrate. The light-shielding film is formed so as to cause a desired film stress in the direction opposite to that of a change in the film stress that is anticipated to be caused in the light-shielding film by heat treatment according to a resist film formed on the light-shielding film. A photomask is produced by patterning the light-shielding film of the photomask blank by dry etching.
申请公布号 KR101503932(B1) 申请公布日期 2015.03.18
申请号 KR20087010325 申请日期 2006.09.29
申请人 发明人
分类号 G03F1/00;G03F1/54;G03F7/20;H01L21/027 主分类号 G03F1/00
代理机构 代理人
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