| 摘要 |
A solid state imaging device 1 includes a photodetecting section 10, a signal readout section 20, a controlling section 30, and a correction processing section 40. In the photodetecting section 10, M×N pixel portions each including a photodiode which generates charges as much as an incident light intensity and a readout switch connected to the photodiode are two-dimensionally arrayed in M rows and N columns. Charges generated in each pixel portion P m,n are input into an integration circuit S n through a readout wiring L O,n , and a voltage value output corresponding to the charge amount from the integration circuit S n is output to an output wiring Lout through a holding circuit H n . In the correction processing section 40, correction processing is performed for frame data repeatedly output from the signal readout section 20, and frame data after being subjected to the correction processing is output. |
