| 摘要 |
A layered structure for use in a gate dielectric of an organic thin film transistor. The stack having a first layer comprising a first dielectric, which has a K value of <4; a surface energy modification layer; and a second layer comprising a second dielectric, which has a K value of >4. The surface energy modification layer comprises Ge, Si or a polymer which is soluble in a solvent having a surface tension of 10 to 40 mN/m. The polymer is preferably a fluoropolymer soluble in a solvent having a surface tension within 15 mN/m of the critical surface energy of said first layer. The first dielectric material is preferably soluable in a fluorinated solvent. The layered gate dielectric structure reduces the capacitance in the device and allows it to operate at low voltages. |
