Metal-oxide-semiconductor (MOS) devices with increased channel periphery and methods of manufacture

摘要

A semiconductor device 50 includes a drift layer 16 disposed on a substrate 14, the drift layer has a non-planar surface 52 having a plurality of repeating features 54, 56 oriented parallel to a length of a channel 28 of the semiconductor device, each the repeating features have a dopant concentration higher than a remainder of the drift layer. A non-planar p-well region 18 may be disposed along a portion of the non-planar surface. A non-planar dielectric layer 24 may be formed on the drift layer. A non-planar gate 26 may be formed on the dielectric layer. A non-planar n+ region 20 may be formed in the non-planar p-well region. The repeating features may be triangular, rectangular or trapezoidal. The drift layer may be formed of silicon carbide (SiC).