| 摘要 |
<p>A novel method and system for extending ion source life and improving ion source performance during carbon implantation are provided. Particularly, the carbon ion implant process involves utilizing a dopant gas mixture comprising carbon monoxide and one or more fluorine-containing gas with carbon represented by the formula CxFy wherein x‰¥1 and y‰¥2 1. At least one fluorine containing gases with carbon is contained in the mixture at about 3-12 volume percent (vol%) based on the volume of the dopant gas mixture. Fluoride ions, radicals or combinations thereof are released from the ionized dopant gas mixture and reacts with deposits derived substantially from carbon along at least one of the surfaces of the repeller electrodes, extraction electrodes and the chamber to reduce the overall amount of deposits. In this manner, a single dopant gas mixture is capable of providing carbon ions and removing and eliminating a wide range of problematic deposits typically encountered during carbon implantation.</p> |
