Semiconductor device

摘要

According to one embodiment, a semiconductor device includes a semiconductor layer having an opening formed therein, a first insulating layer disposed on a bottom surface of the opening and on a sidewall of the opening, a second insulating layer disposed on the sidewall of the opening above the first insulating layer, the second insulating layer being thinner than the first insulating layer, a field plate electrode disposed on the first insulating layer and the second insulating layer and having a recess extending from an upper surface of the field plate electrode towards the bottom surface of the opening, and a first layer disposed in the recess and including a material that is different from a material of the field plate electrode.

主权项

1. A semiconductor device, comprising:
a semiconductor layer between a first electrode and a second electrode and having a first recess extending from a first electrode side of the semiconductor layer toward a second electrode side of the semiconductor layer; a first insulating layer disposed on a bottom surface of the first recess and on a sidewall of the first recess; a second insulating layer disposed on the sidewall above the first insulating layer, the second insulating layer being thinner than the first insulating layer in a direction orthogonal to the sidewall; a field plate electrode disposed on the first insulating layer and the second insulating layer and having a second recess that extends from an upper surface of the field plate electrode towards the bottom surface of the first recess; a first layer disposed in the second recess and including a material that is different from a material of the field plate electrode; a gate electrode on the first electrode side of the semiconductor layer and spaced from the semiconductor layer by a third insulating layer; and a contact region in the semiconductor layer adjacent to the first recess, the contact region being in direct electrical contact with the first electrode and between the sidewall of the first recess and the gate electrode.