Method and system for gallium nitride electronic devices using engineered substrates

摘要

A method for fabricating an electronic device includes providing an engineered substrate structure comprising a III-nitride seed layer, forming GaN-based functional layers coupled to the III-nitride seed layer, and forming a first electrode structure electrically coupled to at least a portion of the GaN-based functional layers. The method also includes joining a carrier substrate opposing the GaN-based functional layers and removing at least a portion of the engineered substrate structure. The method further includes forming a second electrode structure electrically coupled to at least another portion of the GaN-based functional layers and removing the carrier substrate.

主权项

1. A vertical III-nitride electronic device comprising:
a first electrical contact structure; a III-nitride epitaxial buffer layer of a first conductivity type contacting the first electrical contact structure; a III-nitride epitaxial drift layer contacting the III-nitride epitaxial buffer layer; and a second electrical contact structure contacting the III-nitride epitaxial drift layer.