发明名称 |
Shaped contact layer for light emitting heterostructure |
摘要 |
An improved light emitting heterostructure and/or device is provided, which includes a contact layer having a contact shape comprising one of: a clover shape with at least a third order axis of symmetry or an H-shape. The use of these shapes can provide one or more improved operating characteristics for the light emitting devices. The contact shapes can be used, for example, with contact layers on nitride-based devices that emit light having a wavelength in at least one of: the blue spectrum or the deep ultraviolet (UV) spectrum. |
申请公布号 |
US8981417(B2) |
申请公布日期 |
2015.03.17 |
申请号 |
US201113048233 |
申请日期 |
2011.03.15 |
申请人 |
Sensor Electronic Technology, Inc. |
发明人 |
Bilenko Yuriy;Gaska Remigijus;Shur Michael |
分类号 |
H01L33/32;H01L33/38;H01S5/042 |
主分类号 |
H01L33/32 |
代理机构 |
LaBatt, LLC |
代理人 |
LaBatt, LLC |
主权项 |
1. A light emitting heterostructure comprising:
a light generating structure including a top layer, wherein a surface of the top layer includes a first portion configured to be directly connected to a first component, distinct from the light emitting heterostructure, in a circuit; and a contact layer over a second portion of the surface of the top layer distinct from the first portion, wherein the contact layer is an H-shape having a top surface configured to be directly connected to a second component, distinct from the light emitting heterostructure, in the circuit, wherein the H-shape consists essentially of: a pair of substantially parallel fingers connected by a central portion, each finger extending laterally above and laterally below the central portion, and wherein a first finger of the pair of substantially parallel fingers and the central portion have lateral widths between 0.1 and 0.5 current crowding lengths for the light emitting heterostructure. |
地址 |
Columbia SC US |