Monolithic integration of silicon and group III-V devices

摘要

Disclosed is a monolithically integrated silicon and group III-V device that includes a group III-V transistor formed in a III-V semiconductor body disposed over a silicon substrate. At least one via extends through the III-V semiconductor body to couple at least one terminal of the group III-V transistor to a silicon device formed in the silicon substrate. The silicon device can be a Schottky diode, and the group III-V transistor can be a GaN HEMT. In one embodiment an anode of the Schottky diode is formed in the silicon substrate. In another embodiment, the anode of the Schottky diode is formed in a lightly doped epitaxial silicon layer atop the silicon substrate. In one embodiment a parallel combination of the Schottky diode and the group III-V transistor is formed, while in another embodiment is series combination is formed.

主权项

1. A monolithically integrated silicon and group III-V device comprising:
a group III-V transistor formed in a group III-V semiconductor body disposed over a silicon substrate; at least one via extending through said group III-V semiconductor body to couple at least one terminal of said group III-V transistor to a silicon device formed in said silicon substrate; said group III-V transistor and said silicon device configured to be one of coupled in series and coupled in parallel with one another, wherein said silicon device is not electrically connected to a gate of said group III-V transistor.