发明名称 Display device and electronic appliance
摘要 A display device with low manufacturing cost, with low power consumption, capable of being formed over a large substrate, with a high aperture ratio of a pixel, and with high reliability is provided. The display device includes a transistor electrically connected to a light-transmitting pixel electrode and a capacitor. The transistor includes a gate electrode, a gate insulating film over the gate electrode, and a first multilayer film including an oxide semiconductor over the gate insulating film. The capacitor includes the pixel electrode and a conductive electrode formed of a second multilayer film which overlaps with the pixel electrode with a predetermined distance therebetween, and has the same layer structure as the first multilayer film. A channel formation region of the transistor is at least one layer, which is not in contact with the gate insulating film, of the first multilayer film.
申请公布号 US8981372(B2) 申请公布日期 2015.03.17
申请号 US201314018776 申请日期 2013.09.05
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Yamazaki Shunpei
分类号 H01L29/10;H01L29/786;H01L27/12 主分类号 H01L29/10
代理机构 Robinson Intellectual Property Law Office, P.C. 代理人 Robinson Eric J.;Robinson Intellectual Property Law Office, P.C.
主权项 1. A display device comprising: a transistor comprising: a gate electrode;a first insulating film over the gate electrode; anda first multilayer film including an oxide semiconductor over the first insulating film, a light-transmitting pixel electrode electrically connected to the transistor; and a capacitor comprising: a second multilayer film as a capacitor electrode over the first insulating film; andpart of the light-transmitting pixel electrode overlapping with the second multilayer film, wherein a channel formation region in the first multilayer film is not in contact with the first insulating film, and wherein carrier density of the second multilayer film is higher than carrier density of the first multilayer film.
地址 Atsugi-shi, Kanagawa-ken JP