| 发明名称 | Light-emitting element | ||
| 摘要 | Provided is a light-emitting element with high external quantum efficiency and a low drive voltage. The light-emitting element includes a light-emitting layer which contains a phosphorescent compound and a material exhibiting thermally activated delayed fluorescence between a pair of electrodes, wherein a peak of a fluorescence spectrum and/or a peak of a phosphorescence spectrum of the material exhibiting thermally activated delayed fluorescence overlap(s) with a lowest-energy-side absorption band in an absorption spectrum of the phosphorescent compound, and wherein the phosphorescent compound exhibits phosphorescence in the light-emitting layer by voltage application between the pair of electrodes. | ||
| 申请公布号 | US8981355(B2) | 申请公布日期 | 2015.03.17 |
| 申请号 | US201313760301 | 申请日期 | 2013.02.06 |
| 申请人 | Semiconductor Energy Laboratory Co., Ltd. | 发明人 | Seo Satoshi |
| 分类号 | H01L29/08;H01L51/50;H01L51/00 | 主分类号 | H01L29/08 |
| 代理机构 | Husch Blackwell LLP | 代理人 | Husch Blackwell LLP |
| 主权项 | 1. A light-emitting element comprising: a pair of electrodes; and a light-emitting layer between the pair of electrodes, wherein the light-emitting layer comprises a phosphorescent compound and a thermally activated delayed fluorescence material, and wherein a peak of a fluorescence spectrum of the thermally activated delayed fluorescence material overlaps with a lowest-energy-side absorption band in an absorption spectrum of the phosphorescent compound. | ||
| 地址 | JP | ||