Memory device and storage apparatus

摘要

A memory device 10 has an arrangement in which a memory thin film 4 is sandwiched between first and second electrodes 2 and 6, the memory thin film 6 contains at least rare earth elements, the memory thin film 4 or a layer 3 in contact with the memory thin film 4 contains any one of elements selected from Cu, Ag, Zn and the memory thin film 4 or the layer 3 in contact with the memory thin film 4 contains any one of elements selected from Te, S, Se. The memory device can record and read information with ease stably, and this memory device can be manufactured easily by a relatively simple manufacturing method.

主权项

1. A memory device comprising:
a first electrode; a second electrode; and a memory thin film in-between said first and second electrodes, said memory thin film being composed of a metal chalcogenide layer, and (c) a rare earth oxide layer, wherein,
said metal chalcogenide layer is in contact with said first electrode and said metal chalcogenide layer comprises (a) at least one of Cu, Ag, and Zn, and (b) at least one of Te, S, and Se,said memory thin film has a composition gradient such that the concentration of the rare earth oxide decreases in a direction proceeding toward the first electrode, andsaid first electrode has an amorphous structure.