Selective nanoscale growth of lattice mismatched materials

摘要

Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.

主权项

1. A method of forming a semiconductor device comprising:
providing a substrate; depositing a plurality of nanoparticles to form a composite film comprising one or more substantially-single-particle-thick nanoparticle layers over the substrate, wherein the composite film comprises a plurality of inter-particle spaces; epitaxially growing a material over the substrate through the plurality of inter-particle spaces of the composite film, wherein the material has a lattice mismatch with the substrate; and continuing epitaxial growth of the material to laterally coalesce over a top surface of the composite film, wherein the one or more substantially-single-particle-thick nanoparticle layers contacts the substrate, wherein the one or more substantially-single-particle-thick nanoparticle layers is sterically-limited such that each of the plurality of nanoparticles is contacted by multiple additional ones of the plurality of nanoparticles, and wherein the inter-particle spaces are smaller than an average nanoparticle diameter of the plurality of nanoparticles.