| 发明名称 | Magnetoresistive effect element and manufacturing method thereof | ||
| 摘要 | According to one embodiment, a magnetoresistive effect element includes a first ferromagnetic layer, a tunnel barrier provided on the first ferromagnetic layer, and a second ferromagnetic layer provided on the tunnel barrier. The tunnel barrier includes a nonmagnetic mixture containing MgO and a metal oxide with a composition which forms, in a solid phase, a single phase with MgO. | ||
| 申请公布号 | US8982614(B2) | 申请公布日期 | 2015.03.17 |
| 申请号 | US201313962918 | 申请日期 | 2013.08.08 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Nagamine Makoto;Ikeno Daisuke;Nishiyama Katsuya;Natori Katsuaki;Yamakawa Koji |
| 分类号 | G11C11/00;H01L29/66;H01L21/00;H01L43/12;H01F10/32;H01L43/08 | 主分类号 | G11C11/00 |
| 代理机构 | Holtz, Holtz, Goodman & Chick PC | 代理人 | Holtz, Holtz, Goodman & Chick PC |
| 主权项 | 1. A magnetoresistive effect element comprising: a first ferromagnetic layer; a tunnel barrier provided on the first ferromagnetic layer; and a second ferromagnetic layer provided on the tunnel barrier, wherein the tunnel barrier includes a nonmagnetic mixture containing MgO and a metal oxide with a composition which forms, in a solid phase, a single phase with MgO, and wherein the nonmagnetic mixture is (a) MgTiO having a Ti/(Mg +Ti) concentration of more than 0 and 32 mol % or less, (b) MgMnO having an Mn/(Mg +Mn) concentration of more than 0 and 33 mol % or less, or (c) MgZnO having a Zn/(Mg +Zn) concentration of more than 0 and 44 mol % or less. | ||
| 地址 | Tokyo JP | ||